While only a few days ago Intel announced have a burning technology to 20nm NAND flash memory, Toshiba and SanDisk show them they have reached a fine engraving of 19nm.

Toshiba says it is able to manufacture NAND Flash memory engraved in 19nm process through a combination of 2 bits per cell (X2) for modules of 64 GB, 8 GB The Japanese company will also produce the following products based on memory chips, with 3 bits per cell (X3).

The first examples of NAND Flash memory modules from 8 GB X2 19nm will be available at the end of the month, mass production scheduled for the current third quarter 2011. With this technology, Toshiba announced able to offer small SSD with a capacity of 128 GB which can integrate PDAs and Tablets.

A similar announcement was held on the side of SanDisk regarding the production of memory modules 64 Gb 19nm X2, the mark indicating that she will be able to add to its line of products benefiting from the technology X3 19nm in the second half of 2011.